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Moreover, the ease of use provided by the interface might tempt you to try out this versatile application.1. Field of the Invention
The present invention relates to a method of manufacturing a GaAs semiconductor device using an epitaxial growth process, and more particularly, to an improved method of manufacturing a field-effect transistor having a source electrode contact.
2. Description of the Related Art
In a field-effect transistor, an insulating film is formed on a semiconductor substrate to ec5d62056f urapry
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